Petascale Atomistic Simulations of Ultra Scaled Transistors

Project Description

The focus of this project is to investigate ultra scaled transistors with novel channel materials i.e. SiliconGermanium alloy with various Ge concentrations and strain in order to improve the performance thereby reducing the energy consumption. The final design outcomes of the project would either be novel devices that could be used for future nodes or an educated elimination of many potential switches with subpar performance and energy consumption. Regardless of the technology outcome, this project will add to the scientific knowledge of novel alloy materials and devices with very small dimensions at the nanometer scale addressing statistical variability among other things.